MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 96

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Table 34:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Parameter
AC input high
voltage
AC input low
voltage
Output high
voltage
Output low
voltage
Input leakage
current
Output
leakage
current
Output low
current (R/B#)
3.3V VccQ Device Operating Characteristics
Any input VIN =
0V to VCCQ (all
disabled; VOUT
under test=0V)
ALE, CLE, CLK
= 0V to VCCQ
CE#, DQ[7:0],
IOH = –400ìA
(WE#), CLK#,
IOL = 2.1mA
DQS, DQS#,
W/R# (RE#),
VOL = 0.4V
Condition
Notes:
other pins
I/Os are
WP#
1. All leakage currents are per LUN.
2. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to “Full.” See
Table 13 on page 14 for additional details.
IOL (R/B#)
Symbol
VIH (AC)
VIL (AC)
VOH
VOL
ILO
ILI
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
0.8 × VccQ
0.67 ×
VccQ
Min
–0.3
–
–
–
8
96
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Typ
10
–
–
–
–
–
–
VccQ + 0.3
0.2 × VccQ
Max
±10
±10
0.4
–
–
Electrical Characteristics
©2008 Micron Technology, Inc. All rights reserved.
Unit
mA
µA
µA
V
V
V
V
Notes
–
–
–
–
1
1
2
Advance