MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 45

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 32:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
I/O[7:0] (DQ[7:0])
Cycle type
READ PARAMETER PAGE (ECh) Operation
R/B#
Command
ECh
When the ECh command is followed by an 00h address cycle, the target goes busy for
If the READ STATUS (70h) command is used to monitor for command completion, the
READ MODE (00h) command must be used to re-enable data output mode. Use of the
SELECT LUN WITH STATUS (78h) command is prohibited while the target is busy and
during data output.
After
When the asynchronous interface is active, one data byte is output per RE# toggle. When
the synchronous interface is active, one data byte is output for each rising or falling edge
of DQS.
A minimum of seven copies of the parameter page are stored in the device. Each param-
eter page is 256 bytes. If desired, the CHANGE READ COLUMN (05h-E0h) command can
be used to change the location of data output. Use of the SELECT CACHE REGISTER
(06h-E0h) is prohibited.
t
R completes, the host enables data output mode to read the parameter page.
Address
00h
t WB
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
t R
t RR
45
D
P0
OUT
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
P1
OUT
0
D
…
OUT
D
P0
OUT
1
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
D
P1
OUT
1
D
…
OUT
Advance
t
R.