MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 8

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

General Description
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Micron NAND Flash technology provides high-performance NAND Flash memory with
an interface that supports up to 166 MT/s data read and write throughput.
Micron NAND Flash devices include two data interfaces—a synchronous interface for
high-performance I/O operations, and an asynchronous interface for legacy NAND
Flash applications. These devices use a highly multiplexed 8-bit bus (I/O[7:0], DQ[7:0])
to transfer commands, addresses, and data. Data transfers in the synchronous interface
include a bidirectional data strobe (DQS). Between the synchronous and asynchronous
interfaces there are five control signals used to implement the NAND Flash protocol. In
the synchronous interface these signals are CE#, CLE, ALE, CLK, and W/R#; in the asyn-
chronous interface these signals are CE#, CLE, ALE, WE#, and RE#. Additional signals
control hardware write protection (WP#) and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that
remains the same from one density to another, enabling future upgrades to higher
densities with no board redesign.
A logical unit (LUN), or die, is the minimum unit that can independently execute
commands and report status. There is at least one LUN per CE#. Each LUN contains 2
planes. Each plane consists of 1,024 blocks. Each block is subdivided into 128 program-
mable pages.
The contents of each page can be programmed in
erased in
priate error correction code (ECC).
These NAND devices are ONFI 2.0-compliant. The ONFI 2.0 specification can be found
at www.onfi.org.
t
BERS. PROGRAM/ERASE endurance is specified at 100,000 when using appro-
Micron Confidential and Proprietary
8Gb Asychronous/Synchronous NAND Flash Memory
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
PROG, and an entire block can be
General Description
©2008 Micron Technology, Inc. All rights reserved.
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