MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 22

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 14:
Figure 15:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
READ/BUSY# Open Drain
t
Fall and
Notes:
t
Rise (V
1.
2.
3.
4.
5. See TC values in Figure 19 on page 24 for approximate Rp value and TC.
V
t
t
ance.
t
t
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
V
Fall and
Rise dependent on external capacitance and resistive loading and output transistor imped-
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall =10ns at 3.3V
V
CC
SS
CC
–1
Q = 3.3V)
t
I
Rise calculated at 10 percent.90 percent points.
OL
Micron Confidential and Proprietary
0
Device
8Gb Asychronous/Synchronous NAND Flash Memory
2
t Fall t Rise
R/B#
Open drain output
V
CC
4
Q
22
Rp
TC
To controller
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
4
VccQ 3.3V
6
©2008 Micron Technology, Inc. All rights reserved.
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