TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 


Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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Numonyx™ Embedded Flash Memory (J3 v. D)
6.0
Electrical Characteristics
6.1
DC Current Specifications
Table 7:
DC Current Characteristics
V
CCQ
V
CC
Symbol
Parameter
I
Input and V
Load Current
LI
PEN
I
Output Leakage Current
LO
32, 64, 128 Mbit
I
V
Standby Current
CCS
CC
32, 64, 128 Mbit
I
V
Power-Down Current
CCD
CC
I
CCR
V
Page Mode Read Current
CC
8-Word Page
V
Program or Set
CC
I
CCW
Lock-Bit Current
V
Block Erase or
CC
I
Clear Block Lock-Bits
CCE
Current
V
Program
CC
I
Suspend or Block
CCWS
I
Erase Suspend
CCES
Current
Notes:
1.
All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Numonyx’s Application Support Hotline or your local sales office for information about typical
specifications.
2.
Includes STS.
3.
CMOS inputs are either V
± 0.2 V or GND ± 0.2 V. TTL inputs are either V
CC
4.
Sampled, not 100% tested.
5.
I
and I
are specified with the device selected. If the device is read or written while in erase suspend
CCWS
CCES
mode, the device’s current draw is I
November 2007
308551-05
2.7 - 3.6V
2.7 - 3.6V
Typ
Max
Unit
V
CC
±1
μA
V
IN
V
CC
±10
μA
V
IN
50
120
CMOS Inputs, V
μA
VccqMax
256 Mbit
100
240
Device is disabled RP# = V
0.71
2
TTL Inputs, V
mA
Vccq = VccqMax
256 Mbit
1.42
4
Device is disabled, RP# = V
50
120
RP# = GND ± 0.2 V, I
μA
CMOS Inputs, V
Max
15
20
mA
Device is enabled f = 5 MHz, I
4-Word
Page
CMOS Inputs,V
Max
24
29
mA
Device is enabled f = 33 MHz, I
CMOS Inputs, V
Max using standard 8 word page mode
10
15
mA
reads.
Device is enabled f = 5 MHz, I
CMOS Inputs,V
Max using standard 8 word page mode
30
54
mA
reads.
Device is enabled f = 33 MHz, I
35
60
mA
CMOS Inputs, V
40
70
mA
TTL Inputs, V
35
70
mA
CMOS Inputs, V
40
80
mA
TTL Inputs, V
10
mA
Device is enabled
and I
.
CCR
CCWS
Test Conditions
= V
Max; V
= V
Max
CC
CCQ
CCQ
= V
or V
CCQ
SS
= V
Max; V
= V
Max
CC
CCQ
CCQ
= V
or V
CCQ
SS
= V
Max; Vccq =
CC
CC
± 0.2 V
CCQ
= V
Max,
CC
CC
IH
(STS) = 0 mA
OUT
= V
Max, V
= V
CC
CC
CCQ
CCQ
= 0 mA
OUT
= V
Max, V
= V
CC
CC
CCQ
CCQ
= 0 mA
OUT
= V
Max, V
= V
CC
CC
CCQ
CCQ
= 0 mA
OUT
= V
Max, V
= V
CC
CC
CCQ
CCQ
= 0 mA
OUT
= V
PEN
CC
= V
PEN
CC
= V
PEN
CC
= V
PEN
CC
or V
.
IL
IH
Notes
1
1
1,2,3
1,3
1,4
1,4
1,5
Datasheet
21