TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 

Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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1.0
Introduction
This document contains information pertaining to the Numonyx™ Embedded Flash
Memory (J3 v. D) device features, operation, and specifications.
The Numonyx™ Embedded Flash Memory J3 Version D (J3 v. D) provides improved
mainstream performance with enhanced security features, taking advantage of the
high quality and reliability of the NOR-based Intel* 0.13 µm ETOX™ VIII process
technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the
Numonyx™ Embedded Flash Memory (J3 v. D) device brings reliable, low-voltage
capability (3 V read, program, and erase) with high speed, low-power operation. The
Numonyx™ Embedded Flash Memory (J3 v. D) device takes advantage of the proven
manufacturing experience and is ideal for code and data applications where high
density and low cost are required, such as in networking, telecommunications, digital
set top boxes, audio recording, and digital imaging. Numonyx Flash Memory
components also deliver a new generation of forward-compatible software support. By
using the Common Flash Interface (CFI) and Scalable Command Set (SCS), customers
can take advantage of density upgrades and optimized write capabilities of future
Numonyx Flash Memory devices.
1.1
Nomenclature
AMIN:
All Densities
All Densities
32 Mbit
AMAX:
64 Mbit
128 Mbit
Block:
A group of flash cells that share common erase circuitry and erase simultaneously
Clear:
Indicates a logic zero (0)
Program:
To write data to the flash array
Set:
Indicates a logic one (1)
VPEN:
Refers to a signal or package connection name
V
:
Refers to timing or voltage levels
PEN
1.2
Acronyms
CUI:
Command User Interface
OTP:
One Time Programmable
PLR:
Protection Lock Register
PR:
Protection Register
PRD:
Protection Register Data
RFU:
Reserved for Future Use
Datasheet
6
Numonyx™ Embedded Flash Memory (J3 v. D)
AMIN = A0 for x8
AMIN = A1 for x16
AMAX = A21
AMAX = A22
AMAX = A23
November 2007
308551-05