TE28F640J3D75

Manufacturer Part NumberTE28F640J3D75
ManufacturerIntel
TE28F640J3D75 datasheet
 


Specifications of TE28F640J3D75

Cell TypeNORDensity64Mb
Access Time (max)75nsInterface TypeParallel
Boot TypeNot RequiredAddress Bus23/22Bit
Operating Supply Voltage (typ)3/3.3VSync/asyncAsynchronous
Package TypeTSOPProgram/erase Volt (typ)2.7 to 3.6V
Operating Temp Range-40C to 85COperating Temperature ClassificationIndustrial
Operating Supply Voltage (min)2.7VOperating Supply Voltage (max)3.6V
Word Size8/16BitNumber Of Words8M/4Mword
MountingSurface MountPin Count56
Lead Free Status / Rohs StatusNot Compliant  
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Table 29: Byte-Wide Protection Register Addressing
Byte
Use
A8
LOCK
Both
1
LOCK
Both
1
0
Factory
1
1
Factory
1
2
Factory
1
3
Factory
1
4
Factory
1
5
Factory
1
6
Factory
1
7
Factory
1
8
User
1
9
User
1
A
User
1
B
User
1
C
User
1
D
User
1
E
User
1
F
User
1
Note:
All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A[MAX:9] = 0.
9.7.7
VPP/ VPEN Protection
When it’s necessary to protect the entire array, global protection can be achieved using
a hardware mechanism. using VPP or VPEN. Whenever a valid voltage is present on VPP
or VPEN, blocks within the main flash array can be erased or programmed. By
grounding VPP or VPEN, blocks within the main array cannot be altered – attempts to
program or erase blocks will fail resulting in the setting of the appropriate error bit in
the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks
in the array can be achieved.
Datasheet
46
Numonyx™ Embedded Flash Memory (J3 v. D)
A7
A6
A5
A4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
A3
A2
A1
A0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
0
1
0
0
0
1
0
1
0
1
1
0
0
1
1
1
1
0
0
0
1
0
0
1
1
0
1
0
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
1
1
1
0
0
0
0
0
0
0
1
November 2007
308551-05