STM32W108CBU6 STMICROELECTRONICS [STMicroelectronics], STM32W108CBU6 Datasheet - Page 160

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STM32W108CBU6

Manufacturer Part Number
STM32W108CBU6
Description
High-performance, IEEE 802.15.4 wireless system-on-chip
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Electrical characteristics
12.3.3
160/179
Table 30.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 31.
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 32.
Reset pulse width to guarantee a reset
Reset pulse width guaranteed not to cause a reset
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
MSL
LU
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Static latch-up class
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device
model) for non-RF pins
Electrostatic discharge
voltage (charge device
model)for RF pins
Moisture sensitivity level
Reset filter specification for RSTB
ESD absolute maximum ratings
Electrical sensitivities
Parameter
Ratings
Parameter
Doc ID 16252 Rev 2
T
A
= +105 °C conforming to JESD78A
T
conforming to
JESD22-A114
T
conforming to
JESD22-C101
A
A
= +25 °C
= +25 °C
Conditions
Conditions
STM32W108CB, STM32W108HB
26.0
2
II
Min
Class
0
Maximum value
Typ
±2000
MSL3
±400
±225
Max
1.0
II level A
(1)
Class
Unit
Unit
µs
µs
V

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