STM32W108CBU6 STMICROELECTRONICS [STMicroelectronics], STM32W108CBU6 Datasheet - Page 167

• Manufacturer Part Number: STM32W108CBU6
• Description: High-performance, IEEE 802.15.4 wireless system-on-chip
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STM32W108CB, STM32W108HB
Table 40.
ARM
memory sleep current
ARM
memory sleep current
Serial controller current
General purpose timer current
General purpose ADC current
Rx current
Radio receiver, MAC, and
baseband
Total RX current ( = I
MAC and baseband, CPU
Flash memory )
Boost mode total RX current ( =
I
CPU
Tx current
Radio transmitter, MAC, and
baseband
Radio receiver, MAC and baseband,
+ I
®
®
RAM, and Flash memory )
Cortex-M3, RAM, and flash
Cortex-M3, RAM, and flash
Parameter
DC electrical characteristics (continued)
Radio receiver,
+ I
RAM, and
Doc ID 16252 Rev 2
25 °C, 1.8 V memory and
1.25 V core
ARM
12 MHz from the crystal
oscillator
Radio and all peripherals off
25 °C, 1.8 V memory and
1.25 V core
ARM
6 MHz from the high frequency
RC oscillator
Radio and all peripherals off
For each controller at
maximum data rate
For each timer at maximum
clock rate
At maximum sample rate, DMA
enabled
ARM
VDD_PADS = 3.0 V, 25 °C,
ARM
12 MHz
VDD_PADS = 3.0 V, 25 °C,
ARM
24 MHz
VDD_PADS = 3.0 V, 25 °C,
ARM
12 MHz
VDD_PADS = 3.0 V, 2 5°C,
ARM
24 MHz
25 °C and 1.8 V core; max.
power out (+3 dBm typical)
ARM
®
®
®
®
®
®
®
®
Cortex-M3 clocked at
Cortex-M3 clocked at
Cortex-M3 sleeping
Cortex-M3 running at
Cortex-M3 running at
Cortex-M3 running at
Cortex-M3 running at
Cortex-M3 sleeping
Conditions
Min.
Electrical characteristics
Typ.
20.0
27.0
28.0
28.0
29.0
26.0
4.0
2.0
0.2
0.1
1.1
Max.
167/179
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA