STM32W108CBU6 STMICROELECTRONICS [STMicroelectronics], STM32W108CBU6 Datasheet - Page 162

• Manufacturer Part Number: STM32W108CBU6
• Description: High-performance, IEEE 802.15.4 wireless system-on-chip
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
12.4.3
12.4.4
12.4.5
162/179
Low frequency internal clock characteristics
Table 35.
Low frequency external clock characteristics
Table 36.
ADC characteristics
Table 37
a sampling clock of 1 MHz. ADC_HVSELP and ADC_HVSELN are programmed to 0 to
disable the input buffer. The single-ended measurements were done at f
0 dBFS level (where full-scale is a 1.2 V p-p swing). The differential measurements were
done at f
Table 37.
Nominal Frequency
Analog trim step size
Supply dependence
Frequency dependence
Frequency
Accuracy
Load cap xin
Load cap xout
Crystal ESR
Start-up time
Current consumption
ADC_PERIOD
Conversion Time (µs)
Nyquist Freq (kHz)
3 dB Cut-off (kHz)
INL (codes peak)
INL (codes RMS)
input
Parameter
Parameter
Parameter
describes the key ADC parameters measured at 25°C and VDD_PADS at 3.0 V, for
Low-frequency RC oscillator specification
Low-frequency crystal oscillator specification
ADC module key parameters for 1 MHz sampling
= 7.7% f
Nyquist
; -6 dBFS level (where full-scale is a 2.4 V p-p swing).
After trimming
For a voltage drop from 3.6 V
to 3.1 V or 2.6 V to 2.1 V
(without re-calibration)
Frequency variation with
temperature for a change
from -40 oC to +85oC
(without re-calibration)
Initial, temperature, and
ageing
At 25°C, VDD_PADS=3.0 V
15.6
9.42
0.04
0.02
Doc ID 16252 Rev 2
32
0
Test conditions
Test conditions
7.81
4.71
0.04
0.02
64
1
3.91
2.36
0.05
0.02
128
2
Performance
1.95
1.18
0.09
0.03
256
3
STM32W108CB, STM32W108HB
-100
Min
Min
9
0.977
0.589
0.05
512
0.2
4
32.768
Typ
Typ
10
27
18
1
2
0.488
0.294
1024
0.3
0.1
input
5
+100
Max
= 7.7% f
Max
100
0.5
11
1
0.244
0.147 0.0736
2
2048
0.6
0.2
6
Nyquist
ppm
Unit
0.122
kHz
kHz
kHz
Unit
4096
kΩ
pF
pF
µA
%
%
1.2
0.4
s
7
;