DF2367VF33 Renesas Electronics America, DF2367VF33 Datasheet - Page 811

• Manufacturer Part Number: DF2367VF33
• Description: MCU 3V 384K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2367VF33

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• Ram Size: 24K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2367VF33; HD64F2367VF33

Note that memory read of the user MAT/user boot MAT can only read the programmed data after
all user MAT/user boot MAT has automatically been erased.
⎯ There are many commands other than programming/erasing. Examples are sum check,
⎯ When the erasure preparation notice is received, the state for waiting erase-block data is
entered. The erase-block number must be transmitted following the erasing command.
When the erasure is finished, the erase-block number must be set to H'FF and transmitted.
Then the state for waiting erase-block data is returned to the state for waiting
programming/erasing command. The erasure must be used when the specified block is
programmed without a reset start after programming is executed in boot mode. When
programming can be executed by only one operation, all blocks are erased before the state
for waiting programming/erasing/other command is entered. The erasing operation is not
required.
blank check (erasure check), and memory read of the user MAT/user boot MAT and
acquisition of current status information.
Section 20 Flash Memory (0.18-μm F-ZTAT Version)
Rev.6.00 Mar. 18, 2009 Page 751 of 980
REJ09B0050-0600