M30802FCGP#D3 Renesas Electronics America, M30802FCGP#D3 Datasheet - Page 257

IC M16C MCU FLASH 128K 144LQFP

M30802FCGP#D3

Manufacturer Part Number
M30802FCGP#D3
Description
IC M16C MCU FLASH 128K 144LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/80r
Datasheet

Specifications of M30802FCGP#D3

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
121
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30802FCGP#D3M30802FCGP
Manufacturer:
MITSHBISHI
Quantity:
20 000
Company:
Part Number:
M30802FCGP#D3M30802FCGP
Quantity:
81
Company:
Part Number:
M30802FCGP#D3M30802FCGP D5
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
M
R
R
e
E
1
v
J
6
Figure 28.9 V
1 .
0
C
9
0 .
8 /
RAS
DW
BCLK
MAi
CASL
CASH
DB
B
0
0
0
Memory expansion Mode and Microprocessor Mode
(When accessing DRAM area with 1 wait)
1
A
8
G
Write Timing
t
u
7
d(BCLK-RAD)
o r
. g
0 -
*1:It depends on operation frequency.
u
1
0
18ns.max
p
t
0
, 2
t
t
t
d(BCLK-DW)
h(RAS-RAD)
RP
su(DB-CAS)
0
CC
2
Measuring conditions
Hi-Z
=(tcyc/2 x 3-20)ns.min
0
0
=5V timing diagram (8)
5
• V
• Input timing voltage
• Output timing voltage
18ns.max
Page 244
CC
Row address
tcyc
t
=(tcyc-20)ns.min
h(BCLK-RAD)
t
=(tcyc/2-13)ns.min
:Determined with V
:Determined with V
=5V±10%
h(RAS-RAD)
-3ns.min
t
18ns.max
d(BCLK-RAS)
t
f o
su(DB-CAS) *1
3
2
9
*1
t
d(BCLK-CAD)
18ns.max
IH
OH
String address
=2.5V, V
t
=2.0V, V
d(BCLK-CAS)
18ns.max
IL
OL
=0.8V
=0.8V
t
h(BCLK-CAD)
-3ns.min
t
t
t
-3ns.min
-3ns.min
-5ns.min
h(BCLK-DW)
h(BCLK-CAS)
h(BCLK-RAS)
t
h(BCLK-DB)
-7ns.min
28. Electrical characteristics
t
RP
*1
Vcc=5V

Related parts for M30802FCGP#D3