M30802FCGP#D3 Renesas Electronics America, M30802FCGP#D3 Datasheet - Page 259

IC M16C MCU FLASH 128K 144LQFP

M30802FCGP#D3

Manufacturer Part Number
M30802FCGP#D3
Description
IC M16C MCU FLASH 128K 144LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/80r
Datasheet

Specifications of M30802FCGP#D3

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
121
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30802FCGP#D3M30802FCGP
Manufacturer:
MITSHBISHI
Quantity:
20 000
Company:
Part Number:
M30802FCGP#D3M30802FCGP
Quantity:
81
Company:
Part Number:
M30802FCGP#D3M30802FCGP D5
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
M
R
R
e
E
1
v
J
6
Figure 28.11 V
1 .
0
C
9
0 .
8 /
B
MAi
CASL
CASH
DB
BCLK
RAS
DW
0
0
0
1
Memory expansion Mode and Microprocessor Mode
(When accessing DRAM area with 2 wait)
A
8
G
Write Timing
t
u
7
d(BCLK-RAD)
o r
. g
0 -
*1:It depends on operation frequency.
18ns.max
u
1
t
0
p
d(BCLK-DW)
t
t
t
0
, 2
h(RAS-RAD)
RP
su(DB-CAS)
0
Measuring conditions
Hi-Z
=(tcyc/2 x 3-20)ns.min
2
0
CC
• V
• Input timing voltage
• Output timing voltage
0
18ns.max
5
=5V timing diagram (10)
CC
Page 246
t
Row address
tcyc
h(BCLK-RAD)
=(tcyc-20)ns.min
t
=(tcyc/2-13)ns.min
=5V±10%
:Determined with V
:Determined with V
h(RAS-RAD)*1
-3ns.min
18ns.max
t
d(BCLK-RAS)
t
su(DB-CAS)*1
f o
3
2
9
t
d(BCLK-CAD)
18ns.max
IH
OH
=2.5V, V
t
=2.0V, V
d(BCLK-CAS)
18ns.max
IL
OL
=0.8V
String address
=0.8V
t
h(BCLK-CAD)
-3ns.min
t
t
t
-3ns.min
-3ns.min
-5ns.min
h(BCLK-DW)
h(BCLK-RAS)
h(BCLK-CAS)
28. Electrical characteristics
t
h(BCLK-DB)
-7ns.min
t
RP*1
Vcc=5V

Related parts for M30802FCGP#D3