MC68HC908MR16CFU Freescale Semiconductor, MC68HC908MR16CFU Datasheet - Page 41

• Manufacturer Part Number: MC68HC908MR16CFU
• Description: IC MCU 8MHZ 16K FLASH 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908MR16CFU

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 44
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

2.8.4 FLASH Program Operation
Use the following step-by-step procedure to program a row of FLASH memory.
flowchart of the programming algorithm.
This program sequence is repeated throughout the memory until all data is programmed.
1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing PGM
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10. Clear the PGM bit
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
bit, must not exceed the maximum programming time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address being programmed
8. Wait for time, t
9. Repeat step 7 and 8 until all desired bytes within the row are programmed.
address and data for programming.
Only bytes which are currently $FF may be programmed.
The COP register at location $FFFF should not be written between steps
5-12, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
RCV
PROG
NVH
(typical 1 µs), the memory can be accessed in read mode again.
NVS
PGS
Characteristics.
(1)
(minimum 5 µs).
MC68HC908MR32 • MC68HC908MR16 Data Sheet, Rev. 6.1
.
(minimum 30 µs).
(minimum 10 µs).
(minimum 5 µs).
PROG
NOTE
NOTE
NOTE
maximum.
PROG
(1)
maximum, see
.
19.6 FLASH
Figure 2-4
FLASH Memory (FLASH)
shows a
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