PPC8567EVTAUJJ Freescale Semiconductor, PPC8567EVTAUJJ Datasheet - Page 19

• Manufacturer Part Number: PPC8567EVTAUJJ
• Description: MCU PWRQUICC III 1023-FCPBGA
• Manufacturer: Freescale Semiconductor

Specifications of PPC8567EVTAUJJ

• Processor Type: MPC85xx PowerQUICC III 32-Bit
• Speed: 1.333GHz
• Voltage: 1.1V
• Mounting Type: Surface Mount
• Package / Case: 1023-BBGA, FCBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -

6.1
Table 12
MPC8568E when GV
Table 13
Table 14
GV
Freescale Semiconductor
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
DD
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
Peak-to-peak noise on MV
equal to MV
TT
(peak-to-peak) = 0.2 V.
(typ) = 2.5 V
DD
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
provides the DDR capacitance when
provides the recommended operating conditions for the DDR SDRAM component(s) when
is expected to be within 50 mV of the DRAM GV
DDR SDRAM DC Electrical Characteristics
is expected to be equal to 0.5 × GV
Parameter/Condition
Parameter/Condition
MPC8568E/MPC8567E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 1
REF
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
Table 14. DDR SDRAM DC Electrical Characteristics for GV
Parameter/Condition
. This rail should track variations in the DC level of MV
.
OUT
OUT
DD
= 0.280 V)
= 1.420 V)
Table 13. DDR2 SDRAM Capacitance for GV
(typ) = 1.8 V
REF
may not exceed ±2% of the DC value.
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
.
DD
Symbol
Symbol
, and to track GV
MV
MV
GV
GV
V
V
V
V
I
I
I
V
OZ
OH
OL
TT
TT
REF
IH
IL
REF
IH
DD
DD
GV
DD
DD
Symbol
C
(typ) =
C
at all times.
≤
MV
DIO
MV
IO
0.49 × GV
MV
MV
V
0.49 × GV
OUT
REF
REF
DD
–13.4
REF
REF
–0.3
13.4
Min
–10
1.7
1.8 V.
Min
+ 0.125
2.3
DC variations as measured at the receiver.
≤
– 0.04
– 0.04
+ 0.15
A
GV
DD
REF
= 25°C, V
DD
DD
Min
—
.
6
.
DD
MV
(typ)=1.8 V
OUT
MV
0.51 × GV
MV
GV
0.51 × GV
REF
GV
REF
= GV
DD
REF
Max
DD
1.9
DD
10
DD
—
—
Max
Max
2.7
– 0.125
0.5
+ 0.04
+ 0.3
8
(typ) = 2.5 V
+ 0.04
(typ) = 1.8 V
+ 0.3
DD
DD
DD
/2, V
OUT
Unit
DDR and DDR2 SDRAM
pF
pF
Unit
Unit
mA
mA
μA
V
V
V
V
V
V
V
V
V
Notes
1
1
Notes
Notes
—
—
—
—
—
1
2
3
1
2
3
4
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