C8051F060_07 SILABS [Silicon Laboratories], C8051F060_07 Datasheet - Page 178

• Manufacturer Part Number: C8051F060_07
• Description: Mixed Signal ISP Flash MCU Family
• Manufacturer: SILABS [Silicon Laboratories]

C8051F060/1/2/3/4/5/6/7
Write/Erase timing is automatically controlled by hardware. Note that code execution in the 8051 is stalled
while the Flash is being programmed or erased.
16.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction (as described in the previous section) and read using the MOVC instruction.
An additional 128-byte sector of Flash memory is included for non-volatile data storage. Its smaller sector
size makes it particularly well suited as general purpose, non-volatile scratchpad memory. Even though
Flash memory can be written a single byte at a time, an entire sector must be erased first. In order to
change a single byte of a multi-byte data set, the data must be moved to temporary storage. The 128-byte
sector size facilitates updating data without wasting program memory or RAM space. The 128-byte sector
is double-mapped over the normal Flash memory area; its address ranges from 0x00 to 0x7F (see
Figure 16.1 and Figure 16.2). To access this 128-byte sector, the SFLE bit in PSCTL must be set to logic 1.
Code execution from this 128-byte scratchpad sector is not supported.
178
Flash Size *
Flash Size *
Endurance
Erase Cycle Time
Write Cycle Time
* Includes 128-byte Scratch Pad Area
† 1024 Bytes at location 0xFC00 to 0xFFFF are reserved.
Parameter
Step 8. Clear the PSWE bit to redirect MOVX write commands to the XRAM data space.
Step 9. Re-enable interrupts.
C8051F060/1/2/3/4/5
C8051F066/7
Table 16.1. Flash Electrical Characteristics
Conditions
Rev. 1.2
20 k
Min
10
40
65664 †
32896
100 k
Typ
12
50
Max
14
60
Erase/Write
Bytes
Bytes
Units
ms
µs