S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 14
S34ML02G100BHI003
Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet
1.S34ML04G100BHI000.pdf
(76 pages)
Specifications of S34ML02G100BHI003
Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
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1.5
14
Array Organization
Blocks
Blocks
Plane
Plane
1024
1024
Page Buffer
Page Buffer
per
per
Spansion
®
SLC NAND Flash Memory for Embedded
2048 bytes
1024 words
1022
1023
1022
1023
0
1
2
Array Organization (x8)
0
1
2
Array Organization (x16)
Plane(s)
Plane(s)
Figure 1.7 Array Organization — x16
Figure 1.6 Array Organization — x8
64 bytes
32 words
D a t a
S h e e t
I/O0~I/O15
[7:0]
I/O
1 Page = (2k + 64) bytes
1 Block = (2k + 64) bytes x 64 pages
1 Plane = (128k + 4k) bytes x 1024 Blocks
1 Page = (1k + 32) words
1 Block = (1k + 32) words x 64 pages
1 Plane = (64k + 2k) words x 1024 Blocks
Note:
For 1 Gb and 2 Gb devices there are 1024 Blocks per Plane
For 4 Gb device there are 2048 Blocks per Plane
2 Gb and 4 Gb devices have two Planes
Note:
For 1 Gb and 2 Gb devices there are 1024 Blocks per Plane
For 4 Gb device there are 2048 Blocks per Plane
2 Gb and 4 Gb devices have two Planes
= (128k + 4k) bytes
= (64k + 2k) words
S34ML01G1_04G1_15 March 7, 2013
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