S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 74

• Manufacturer Part Number: S34ML02G100BHI003
• Description: Flash 2G, 3V, 25ns NAND Flash
• Manufacturer: Spansion

Specifications of S34ML02G100BHI003

• Rohs: yes
• Data Bus Width: 1 bit
• Memory Type: NAND Flash
• Memory Size: 2 Gbit
• Architecture: Sectored
• Timing Type: Asynchronous
• Access Time: 25 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 40 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-63
• Organization: 2048 B x 8, 2048 B x 16

74
Multiplane Block Erase — S34ML02G1
and S34ML04G1
Copy Back Program
Multiplane Copy Back Program —
S34ML02G1 and S34ML04G1
Multiplane Cache Program —
S34ML02G1 and S34ML04G1
Read Parameter Page
Multiplane Page Program Operation —
S34ML02G1 and S34ML04G1
Multiplane Block Erase — S34ML02G1
and S34ML04G1
Multiplane Copy Back Program —
S34ML02G1 and S34ML04G1
Multiplane Cache Program —
S34ML02G1 and S34ML04G1
AC Characteristics
Revision 12 (November 2, 2012)
Global
Absolute Maximum Ratings
Ordering Information
Revision 13 (December 19, 2012)
Command Set
Page Reprogram
Copy Back Program
Reset
ReadID2
Read Parameter Page
DC Characteristics
AC Characteristics
Page Read Operation
Read ID2 Operation Timing
Section
Spansion
Added text
Added text
Added text
Added text
Parameter Page Description table:
Added note to Multiplane Page Program figure
Added note to Multiplane Page Program (ONFI 1.0 Protocol) figure
Added note to Multiplane Block Erase figure
Updated note to Multiplane Block Erase (ONFI 1.0 Protocol) figure
Added note to Multiplane Copy Back Program figure
Multiplane Copy Back Program (ONFI 1.0 Protocol) figure: corrected IOx values
Updated note
Added note to Multiplane Cache Program figure
Multiplane Cache Program (ONFI 1.0 Protocol) figure:
AC Characteristics table: added CE# access time
Data Sheet designation updated from Preliminary to Full Production
Added note
Valid Combinations table: added to Additional Ordering Options
Added Page Reprogram command
Changed ReadID2 to be “Supported on S34ML01G1”
Moved section
Added paragraph
Added paragraph
Updated paragraph
Updated paragraph
Parameter Page Description table:
DC Characteristics and Operating Conditions table:
AC Characteristics table: added note
Page Read Operation (Read One Page) figure: added note
Read ID2 Operation Timing figure:
replaced t
added note
®
removed address values from RY/BY#
changed IOx value from F1h to 70h
updated note
fixed Values of Bytes 6-7 and 254-255
fixed Description of Bytes 129-130 and 131-132
Power-On Reset Current (S34ML01G1): removed row
Operating Current: removed I
Input Leakage Current: removed V
Output Leakage Current: removed V
Output High Voltage: removed I
Output Low Voltage: removed I
Output Low Current (R/B#): removed V
corrected Electrical Parameters Block values for bytes 129-130 and bytes 131-132
corrected Vendor Block values for bytes 254-255
SLC NAND Flash Memory for Embedded
WHR
with t
R
and added R/B# timing signal
D a t a
CC1
OL
OH
: t
= -100 µA row
IN
RC
= -100 µA, I
S h e e t
OUT
= 0 to V
= t
OL
Description
RC
= 0 to V
= 0.1V row
(min); I
CC
OH
(max)
CC
= 100 µA, and I
CC2
(max)
: removed Cache (S34ML01G1)
S34ML01G1_04G1_15 March 7, 2013
OH
= 400 µA rows