S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 48

• Manufacturer Part Number: S34ML02G100BHI003
• Description: Flash 2G, 3V, 25ns NAND Flash
• Manufacturer: Spansion

Specifications of S34ML02G100BHI003

• Rohs: yes
• Data Bus Width: 1 bit
• Memory Type: NAND Flash
• Memory Size: 2 Gbit
• Architecture: Sectored
• Timing Type: Asynchronous
• Access Time: 25 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 40 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-63
• Organization: 2048 B x 8, 2048 B x 16

6.10
6.11
48
Page Program Operation Timing with CE# Don’t Care
Page Program Operation with Random Data Input
Notes:
1. t
2. For EDC operation only one time Random Data Input is possible at same address.
WE#
CE#
CLE
ALE
RE#
I/Ox
R/B#
WE#
CLE
CE#
RE#
ALE
I/Ox
ADL
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
Input Command
Serial Data
80h
80h
tWC
Spansion
Column Address
Add1
Col.
Add. 1
Col.
Add2
Figure 6.10 Page Program Operation Timing with CE# Don’t Care
Col.
Add. 2
Col.
®
SLC NAND Flash Memory for Embedded
Row
Add1
Add. 1
tWC
Row
Row Address
Row
Add2
Add. 2
Row
Row
Add3
Add. 3
Row
Figure 6.11 Random Data Input
WE#
CE#
tADL
Din
N
D a t a
Din
N
Din
M
Input Command
N + 1
Random Data
Din
tCS
85h
tWP
tWC
S h e e t
Add1
tCH
Col.
Column Address
Din
M
Add2
Col.
CE# don’t care
tADL
Din
J
Serial Input
S34ML01G1_04G1_15 March 7, 2013
Din
K
Command
Program
10h
Din
P
tWB
P + 1
Din
tPROG
: Don’t Care
Din
R
70h
tWHR
Read Status
Command
10h
IO0