S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 3

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S34ML02G100BHI003

Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI003

Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
Distinctive Characteristics
Performance
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
 Density
 Architecture
 Page Read / Program
 Block Erase (S34ML01G1)
 Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1)
Spansion
Embedded
1 Gb, 2 Gb, 4 Gb Densities:
1-bit ECC, x8 and x16 I/O, 3V V
S34ML01G1, S34ML02G1, S34ML04G1
Data Sheet
– 1 Gbit / 2 Gbit / 4 Gbit
– Input / Output Bus Width: 8-bits / 16-bits
– Page Size:
– Block Size: 64 Pages
– Plane Size:
– Device Size:
– Random access: 25 µs (Max)
– Sequential access: 25 ns (Min)
– Program time / Multiplane Program time: 200 µs (Typ)
– Block Erase time: 2.0 ms (Typ)
– Block Erase time: 3.5 ms (Typ)
– x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area
– x16 = 1056 (1024 + 32) words; 32 words is spare area
– x8 = 128k + 4k bytes
– x16 = 64k + 2k words
– 1 Gbit / 2 Gbit: 1024 Blocks per Plane
– 4 Gbit: 2048 Blocks per Plane
– 1 Gbit: 1 Plane per Device or 128 Mbyte
– 2 Gbit: 2 Planes per Device or 256 Mbyte
– 4 Gbit: 2 Planes per Device or 512 Mbyte
x8 = 128M + 4M bytes
x16 = 64M + 2M words
x8 = 256M + 8M bytes
x16 = 128M + 4M words
Publication Number S34ML01G1_04G1
®
SLC NAND Flash Memory for
CC
Revision 15
 NAND Flash Interface
 Supply Voltage
 Security
 Additional Features
 Electronic Signature
 Operating Temperature
 Reliability
 Package Options
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
– 3.3V device: Vcc = 2.7V ~ 3.6V
– One Time Programmable (OTP) area
– Serial number (unique ID)
– Hardware program/erase disabled during power transition
– 2 Gb and 4 Gb parts support Multiplane Program and Erase
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back Program
– Supports Read Cache
– Manufacturer ID: 01h
– Commercial: 0°C to 70°C
– Extended: -25°C to 85°C
– Industrial: -40°C to 85°C
– 100,000 Program / Erase cycles (Typ)
– 10 Year Data retention (Typ)
– Block zero is a valid block and will be valid for at least 1000
– Lead Free and Low Halogen
– 48-Pin TSOP 12 x 20 x 1.2 mm
– 63-Ball BGA 9 x 11 x 1 mm
commands
(with 1 bit ECC per 528 bytes (x8) or 264 words (x16))
program-erase cycles
Issue Date March 7, 2013

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