S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 69

• Manufacturer Part Number: S34ML02G100BHI003
• Description: Flash 2G, 3V, 25ns NAND Flash
• Manufacturer: Spansion

Specifications of S34ML02G100BHI003

• Rohs: yes
• Data Bus Width: 1 bit
• Memory Type: NAND Flash
• Memory Size: 2 Gbit
• Architecture: Sectored
• Timing Type: Asynchronous
• Access Time: 25 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Maximum Operating Current: 40 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-63
• Organization: 2048 B x 8, 2048 B x 16

9. Error Management
9.1
March 7, 2013 S34ML01G1_04G1_15
System Bad Block Replacement
Over the lifetime of the device, additional Bad Blocks may develop. In this case, each bad block has to be
replaced by copying any valid data to a new block. These additional Bad Blocks can be identified whenever a
program or erase operation reports “Fail” in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the
block can be replaced by re-programming the current data and copying the rest of the replaced block to an
available valid block. Refer to
occurs during an operation.
Notes:
1. An error occurs on the Nth page of Block A during a program operation.
2. Data in Block A is copied to the same location in Block B, which is a valid block.
3. The Nth page of block A, which is in controller buffer memory, is copied into the Nth page of Block B.
4. Bad block table should be updated to prevent from erasing or programming Block A.
N page
th
D a t a
Operation
Failure
Program
Erase
Spansion
Read
Block A
Data
FFh
Table 9.1
(1)
S h e e t
buffer memory of the controller
®
Figure 9.1 Bad Block Replacement
SLC NAND Flash Memory for Embedded
and
Table 9.1 Block Failure
Figure 9.1
(3)
(2)
for the recommended procedure to follow if an error
Block B
Data
FFh
Recommended Procedure
ECC (1 bit / 512+16 byte)
Block Replacement
Block Replacement
N page
th
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