S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 46

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S34ML02G100BHI003

Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI003

Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
6.6
6.7
46
Page Read Operation
Page Read Operation (Intercepted by CE#)
Note:
1. If Status Register polling is used to determine completion of the read operation, the Read Command (00h) must be issued before data
R/B#
WE#
CLE
CE#
RE#
ALE
can be read from the page buffer.
I/Ox
R/B#
WE#
CLE
CE#
RE#
I/Ox
ALE
Spansion
tWC
00h
00h
Add. 1
®
Col.
Column Address
Column Address
Add. 1
SLC NAND Flash Memory for Embedded
Col.
Figure 6.7 Page Read Operation Intercepted by CE#
Figure 6.6 Page Read Operation (Read One Page)
Add. 2
Col.
Add. 2
Col.
Add. 1
Row
Add. 1
Row
Row Address
Row Address
Add. 2
Row
D a t a
Add. 2
Row
Add. 3
Add. 3
Row
Row
S h e e t
tWB
tWB
30h
30h
tCLR
tCLR
Busy
Busy
tRR
tR
tR
tRR
tAR
Dout N
S34ML01G1_04G1_15 March 7, 2013
Dout N
tAR
tRC
Dout
N +1
tCHZ
tCOH
Dout
tRC
N +1
tCSD
tCSD
Dout
N +2
tRHZ
Dout
M

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