S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 67

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S34ML02G100BHI003

Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI003

Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
8. System Interface
March 7, 2013 S34ML01G1_04G1_15
To simplify system interface, CE# may be unasserted during data loading or sequential data reading as
shown in
Contrary to standard NAND, CE# don't care devices do not allow sequential read function.
WE#
CLE
CE#
ALE
I/Ox
Figure
R/B#
WE#
CLE
CE#
RE#
ALE
I/Ox
8.1. By operating in this way, it is possible to connect NAND flash to a microprocessor.
8
0
0
0
h
h
D a t a
Spansion
If sequential row read enabled,
CE must be held low during tR.
Figure 8.1 Program Operation with CE# Don't Care
S
S
a t
Figure 8.2 Read Operation with CE# Don't Care
a t
t r
t r
A
A
d
d
S h e e t
. d
. d
®
(5 Cycle)
(5 Cycle)
SLC NAND Flash Memory for Embedded
3
0
h
tR
D
a
a t
n I
p
t u
CE# don’t care
D
a
CE# don’t care
a t
Data Input
O
u
p t
u
( t
e s
q
u
e
t n
a i
) l
1
0
h
67

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