S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 33

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S34ML02G100BHI003

Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI003

Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
March 7, 2013 S34ML01G1_04G1_15
3
4
Internal Chip Number
Cell type
Number of simultaneously
programmed pages
Interleave program
Between multiple chips
Cache Program
Page size
(without spare area)
Block Size
(without spare area)
Spare Area Size (byte /
512 byte)
Serial Access Time
Organization
rd
th
ID Data
ID Data
D a t a
Table 3.9 Read ID Byte 4 Description — S34ML01G1
Spansion
Description
Reserved
Reserved
128 kB
256 kB
512 kB
64 kB
45 ns
25 ns
1 kB
2 kB
4 kB
8 kB
x16
16
Not supported
Not supported
x8
8
Description
16-level cell
2-level cell
4-level cell
8-level cell
Supported
Supported
S h e e t
Table 3.8 Read ID Byte 3 Description
®
1
2
4
8
1
2
4
8
SLC NAND Flash Memory for Embedded
I/O7
0
0
1
1
I/O7
0
1
I/O6
0
1
I/O6
0
1
I/O5 I/O4
0 0
0 1
1 0
1 1
I/O5 I/O4
0 0
0 1
1 0
11
I/O3
0
1
0
1
I/O3 I/O2
0 0
0 1
1 0
1 1
I/O2
0
1
I/O1 I/O0
I/O1 I/O0
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
33

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