S34ML02G100BHI003 Spansion, S34ML02G100BHI003 Datasheet - Page 57

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S34ML02G100BHI003

Manufacturer Part Number
S34ML02G100BHI003
Description
Flash 2G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet

Specifications of S34ML02G100BHI003

Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
2 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
BGA-63
Organization
2048 B x 8, 2048 B x 16
6.23
March 7, 2013 S34ML01G1_04G1_15
Cache Timing
Cycle Type
Cycle Type
Cycle Type
Cycle Type
SR[6]
SR[6]
SR[6]
Figure 6.28 “Sequential” Read Cache Timing, Start (and Continuation) of Cache Operation
I/Ox
I/Ox
I/Ox
SR[6]
(Sequential or Random)
Figure 6.29 “Random” Read Cache Timing, Start (and Continuation) of Cache Operation
I/Ox
As defined
for Read
As defined for
As defined for
Read Cache
A
CMD
30h
CMD
CMD
00h
Read
CMD
3
tWB
31h
0
h
tWB
tWB
ADDR
C1
Figure 6.30 Read Cache Timing, End Of Cache Operation
D a t a
tR
Spansion
tCBSYR
tRR
ADDR
tR
C2
tRR
Page R
ADDR
CMD
00h
S h e e t
R1
®
CMD
31h
SLC NAND Flash Memory for Embedded
Dout
ADDR
D0
ADDR
R2
tWB
C1
ADDR
Dout
ADDR
. . .
R3
tCBSYR
C2
Page N
ADDR
CMD
31h
Dout
R1
Dn
tRR
tWB
Dout
ADDR
D
R2
CMD
0
3Fh
tCBSYR
tRR
tWB
ADDR
Dout
R3
...
CMD
31h
Dout
Dout
D0
tCBSYR
Dn
tWB
tRR
CMD
tCBSYR
31h
tRR
tWB
Dout
D0
tCBSYR
Dout
D0
Dout
. . .
Dout
. . .
tRR
Dout
Dn
Dout
D0
Dout
Dn
A
57

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