MC9S12E64CFU Freescale Semiconductor, MC9S12E64CFU Datasheet - Page 566

IC MCU 64K FLASH 25MHZ 80-QFP

MC9S12E64CFU

Manufacturer Part Number
MC9S12E64CFU
Description
IC MCU 64K FLASH 25MHZ 80-QFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheets

Specifications of MC9S12E64CFU

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
EBI/EMI, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
60
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 2.75 V
Data Converters
A/D 16x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-QFP
Data Bus Width
16 bit
Data Ram Size
4 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
60
Number Of Timers
16 bit
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
On-chip Dac
8 bit, 2 Channel
For Use With
M68EVB912E128 - BOARD EVAL FOR MC9S12E128/64
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No RoHS Version Available

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Appendix A Electrical Characteristics
A.1.6
All ESD testing is in conformity with CDF-AEC-Q100 Stress test qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
566
Human Body
Machine
Latch-up
Num
1
2
3
4
5
Model
C
C
C
C
C
C
ESD Protection and Latch-up Immunity
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at 125 C
Latch-up Current at 27 C
positive
negative
positive
negative
positive
negative
positive
negative
Table A-3. ESD and Latch-Up Protection Characteristics
Table A-2. ESD and Latch-up Test Conditions
MC9S12E128 Data Sheet, Rev. 1.07
Rating
Description
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
R1
R1
C
C
2000
+100
+200
-100
-200
Min
200
500
Freescale Semiconductor
Value
1500
–2.5
100
200
7.5
3
3
0
3
3
Max
Ohm
Ohm
Unit
Unit
pF
pF
mA
mA
V
V
V
V
V

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