MT29C4G48MAZAPAKD-5 E IT Micron, MT29C4G48MAZAPAKD-5 E IT Datasheet - Page 160

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MT29C4G48MAZAPAKD-5 E IT

Manufacturer Part Number
MT29C4G48MAZAPAKD-5 E IT
Description
Manufacturer
Micron
Datasheet
Figure 107: WRITE Command
PRECHARGE
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. H 3/11
Note:
BA0, BA1
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks will be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands being issued to that bank.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
Column
DIS AP
EN AP
Bank
Don’t Care
160
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Commands

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