EVB9S08DZ60 Freescale Semiconductor, EVB9S08DZ60 Datasheet - Page 389

• Manufacturer Part Number: EVB9S08DZ60
• Description: BOARD EVAL FOR 9S08DZ60
• Manufacturer: Freescale Semiconductor
• Type: MCUr

Specifications of EVB9S08DZ60

• Contents: Module and Misc Hardware
• Processor To Be Evaluated: S08D
• Data Bus Width: 8 bit
• Interface Type: RS-232, USB
• Silicon Manufacturer: Freescale
• Core Architecture: HCS08
• Core Sub-architecture: HCS08
• Silicon Core Number: MC9S08
• Silicon Family Name: S08D
• Kit Contents: Board Cables CD Power Supply
• Rohs Compliant: Yes
• For Use With/related Products: MC9S08DZ60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A.13 Flash and EEPROM
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Num
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for Flash and EEPROM is based on the intrinsic bit cell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
11
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Flash Program/erase endurance
EEPROM Program/erase endurance
Data retention
0 < f
0 < f
T
T = 25°C
T
T
T = 25°C
L
L
L
to T
to T
to T
Bus
Bus
H
H
H
< 20 MHz
< 8 MHz
= –40°C to + 125°C
= –40°C to + 0°C
= 0°C to + 125°C
4
2
(2)
Rating
Table A-17. Flash and EEPROM Characteristics
1
MC9S08DZ60 Series Data Sheet, Rev. 4
(2)
3
3
(2)
V
Symbol
prog/erase
n
V
n
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
EEPE
Fcyc
FLPE
prog
Read
10,000
10,000
50,000
150
Min
2.7
2.7
15
—
—
5
Chapter 4,
100,000
100,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
—
—
—
9
4
“Memory.”
6.67
Max
200
5.5
5.5
—
—
—
—
—
—
DD
cycles
cycles
years
supply.
t
t
t
t
Unit
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
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