MC68HC912B32MFU8 MOTOROLA [Motorola, Inc], MC68HC912B32MFU8 Datasheet - Page 41

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MC68HC912B32MFU8

Manufacturer Part Number
MC68HC912B32MFU8
Description
16-Bit Microcontroller
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MC68HC912B32
MC68HC912B32TS/D
the longest possible life expectancy. This method requires stopping the program/erase sequence at pe-
riods of t
the location reaches the proper value, it must continue to be programmed/erased with additional margin
pulses to ensure that it will remain programmed/erased. Failure to provide the margin pulses could lead
to corrupted or unreliable data.
Program/Erase Sequence — To begin a program or erase sequence the external V
be applied and stabilized. The ERAS bit must be set or cleared, depending on whether a program se-
quence or an erase sequence is to occur. The LAT bit will be set to cause any subsequent data written
to a valid address within the Flash EEPROM to be latched into the programming address and data latch-
es. The next Flash array write cycle must be either to the location that is to be programmed if a pro-
gramming sequence is being performed, or, if erasing, to any valid Flash EEPROM array location.
Writing the new address and data information to the Flash EEPROM is followed by assertion of ENPE
to turn on the program/erase voltage to program/erase the new location(s). The LAT bit must be assert-
ed and the address and data latched to allow the setting of the ENPE control bit. If the data and address
have not been latched, an attempt to assert ENPE will be ignored and ENPE will remain negated after
the write cycle to FEECTL is completed. The LAT bit must remain asserted and the ERAS bit must re-
main in its current state as long as ENPE is asserted. A write to the LAT bit to clear it while ENPE is set
will be ignored. That is, after the write cycle, LAT will remain asserted. Likewise, an attempt to change
the state of ERAS will be ignored and the state of the ERAS bit will remain unchanged.
The programming software is responsible for all timing during a program sequence. This includes the
total number of program pulses (n
pulses (p
The erase software is responsible for all timing during an erase sequence. This includes the total num-
ber of erase pulses (e
the delay between turning off the high voltage and verifying the operation (t
Software also controls the supply of the proper program/erase voltage to the V
the proper level before ENPE is set during a program/erase sequence.
A program/erase cycle should not be in progress when starting another program/erase, or while at-
tempting to read from the array.
PPULSE
m
) and the delay between turning off the high voltage and verifying the operation (t
Although clearing ENPE disables the program/erase voltage (V
pin to the array, care must be taken to ensure that V
gramming/erasing is not in progress. Not doing so could damage the part. Ensuring
that V
V
all programming and erasing can be done prior to installing the device on an appli-
cation circuit board which can always connect V
be accomplished by plugging the board into a special programming fixture which
provides program/erase voltage to the V
FP
(t
power supply with the programming software via an output pin. Alternatively,
EPULSE
FP
is always greater or equal to V
m
), the length of the erase pulse (t
for erasing) to determine if the Flash EEPROM is programmed/erased. After
PP
), the length of the program pulse (t
NOTE
DD
FP
can be accomplished by controlling the
EPULSE
pin.
FP
), the erase margin pulse or pulses, and
to V
FP
DD
is at V
. Programming can also
PPULSE
VERASE
DD
FP
FP
) from the V
whenever pro-
), the program margin
pin, and should be at
).
FP
voltage must
MOTOROLA
VPROG
FP
).
41

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