MC68HC912B32MFU8 MOTOROLA [Motorola, Inc], MC68HC912B32MFU8 Datasheet - Page 44

• Manufacturer Part Number: MC68HC912B32MFU8
• Description: 16-Bit Microcontroller
• Manufacturer: MOTOROLA [Motorola, Inc]

7.7 Erasing the Flash EEPROM
44
MOTOROLA
The following sequence demonstrates the recommended procedure for erasing the Flash EEPROM.
The V
The flowchart in Figure 8 demonstrates the recommended erase sequence.
1. Turn on V
2. Set the LAT bit and ERAS bit to configure the Flash EEPROM for erasing.
3. Write to any valid address in the Flash array. This allows the erase voltage to be turned on; the
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse (t
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the entire array to ensure that the Flash EEPROM is erased.
9. Read the entire array to ensure that the Flash EEPROM is erased.
10. Clear LAT.
11. Turn off V
FP
data written and the address written are not important. The boot block will be erased only if the
control bit BOOTP is negated.
pin voltage must be at the proper level prior to executing step 4 the first time.
• If all of the Flash EEPROM locations are not erased, repeat steps 4 through 7 until either the
• If all of the Flash EEPROM locations are erased, repeat the same number of pulses as re-
remaining locations are erased, or until the maximum erase pulses have been applied (n
quired to erase the array. This provides 100% erase margin.
FP
FP
(apply program/erase voltage to the V
(reduce voltage on V
EPULSE
FP
pin to V
).
VERASE
DD
).
).
FP
pin).
MC68HC912B32TS/D
MC68HC912B32
EP
)