MC68HC912B32MFU8 MOTOROLA [Motorola, Inc], MC68HC912B32MFU8 Datasheet - Page 42
MC68HC912B32MFU8
Manufacturer Part Number
MC68HC912B32MFU8
Description
16-Bit Microcontroller
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC912B32MFU8.pdf
(128 pages)
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7.6 Programming the Flash EEPROM
42
MOTOROLA
Programming the Flash EEPROM is accomplished by the following sequence. The V
must be at the proper level prior to executing step 4 the first time.
The flowchart in Figure 7 demonstrates the recommended programming sequence.
1. Apply program/erase voltage to the V
2. Clear ERAS and set the LAT bit in the FEECTL register to establish program mode and enable
3. Write data to a valid address. The address and data is latched. If BOOTP is asserted, an at-
4. Apply programming voltage by setting ENPE.
5. Delay for one programming pulse (t
6. Remove programming voltage by clearing ENPE.
7. Delay while high voltage is turning off (t
8. Read the address location to verify that it has been programmed
9. Read the address location to verify that it remains programmed.
10. Clear LAT.
11. If there are more locations to program, repeat steps 2 through 10.
12. Turn off V
programming address and data latches.
tempt to program an address in the boot block will be ignored.
• If the location is not programmed, repeat steps 4 through 7 until the location is programmed
• If the location is programmed, repeat the same number of pulses as required to program the
or until the specified maximum number of program pulses has been reached (n
location. This provides 100% program margin.
FP
(reduce voltage on V
FP
PPULSE
pin to V
FP
VPROG
pin.
).
DD
).
).
MC68HC912B32TS/D
MC68HC912B32
FP
PP
pin voltage
)
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