MCHC908JW32FAE Freescale Semiconductor, MCHC908JW32FAE Datasheet - Page 36

• Manufacturer Part Number: MCHC908JW32FAE
• Description: IC MCU 32K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCHC908JW32FAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SPI, USB
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 29
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 48
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: SPI
• Rohs Compliant: Yes
• Processor Series: HC08JW
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SPI, USB
• Number Of Programmable I/os: 29
• Number Of Timers: 2
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

Memory
2.5.2 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operation.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
2.5.3 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 512 consecutive
bytes starting from addresses $X000, $X200, $X400, $X600, $X800, $XA00, $XC00 or $XE00. The
48-byte user interrupt vectors cannot be erased by the page erase operation because of security reasons.
Mass erase is required to erase this page.
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1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the page address range desired.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation or page erase operation when the
ERASE bit is set.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Address:
Reset:
Read:
Write:
erase
$FE08
nvs
Bit 7
0
0
(5 µs).
(20 ms).
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908JW32 Data Sheet, Rev. 6
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0