MCHC908JW32FAE Freescale Semiconductor, MCHC908JW32FAE Datasheet - Page 37

• Manufacturer Part Number: MCHC908JW32FAE
• Description: IC MCU 32K FLASH 8MHZ 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCHC908JW32FAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SPI, USB
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 29
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3.5 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 48
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: SPI
• Rohs Compliant: Yes
• Processor Series: HC08JW
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SPI, USB
• Number Of Programmable I/os: 29
• Number Of Timers: 2
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX800 or $XXC00. Use the following procedure to program a
row of FLASH memory.
Freescale Semiconductor
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
7. Wait for a time, t
8. Clear the HVEN bit
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the FLASH memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Write any data to any FLASH location within the address range of the row to be programmed.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are programmed.
9. Clear the PGM bit.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
rcv
rcv
rcv
(1 µs), the memory can be accessed in read mode again.
(1 µs), the memory can be accessed in read mode again.
prog
nvh
(1 µs), the memory can be accessed in read mode again.
me
nvh
nvs
nvh1
nvs
pgs
(Figure 2-4
(5 µs).
(200 ms).
(20 µs to 40 µs).
(5 µs).
(5 µs).
(5 µs).
(10 µs).
(100 µs).
shows a flowchart of the programming algorithm.)
MC68HC908JW32 Data Sheet, Rev. 6
NOTE
NOTE
FLASH Memory
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