MC9S08QG4MPAE Freescale Semiconductor, MC9S08QG4MPAE Datasheet - Page 288

IC MCU 4K FLASH 8-PDIP

MC9S08QG4MPAE

Manufacturer Part Number
MC9S08QG4MPAE
Description
IC MCU 4K FLASH 8-PDIP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08QG4MPAE

Core Processor
HCS08
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
4
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-DIP (0.300", 7.62mm)
Controller Family/series
HCS08
No. Of I/o's
6
Ram Memory Size
256Byte
Cpu Speed
20MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Processor Series
S08QG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
12
Number Of Timers
1
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08QG8E
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
1
Appendix A Electrical Characteristics
A.12 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.12.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
A.12.2
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale
test method. The measurement is performed with the microcontroller installed on a custom EMC
evaluation board and running specialized EMC test software designed in compliance with the test method.
The conducted susceptibility is determined by injecting the transient susceptibility signal on each pin of
the microcontroller. The transient waveform and injection methodology is based on IEC 61000-4-4
(EFT/B). The transient voltage required to cause performance degradation on any pin in the tested
configuration is greater than or equal to the reported levels unless otherwise indicated by footnotes below
Table
286
Radiated emissions,
electric field
Data based on qualification test results.
A-17.
Parameter
Radiated Emissions
Conducted Transient Susceptibility
V
Symbol
Table A-16. Radiated Emissions, Electric Field
RE_TEM
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
package type
V
Conditions
T
16 TSSOP
A
DD
= +25
= 3.3 V
o
C
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
Frequency
SAE Level
IEC Level
4-MHz crystal
10-MHz bus
f
OSC
/f
BUS
Freescale Semiconductor
Level
(Max)
TBD
TBD
TBD
TBD
TBD
TBD
1
dBμV
Unit

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