PIC18F86K22-I/PTRSL Microchip Technology, PIC18F86K22-I/PTRSL Datasheet - Page 497

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PIC18F86K22-I/PTRSL

Manufacturer Part Number
PIC18F86K22-I/PTRSL
Description
MCU PIC 64K FLASH XLP 80TQFP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F86K22-I/PTRSL

Core Size
8-Bit
Program Memory Size
64KB (32K x 16)
Core Processor
PIC
Speed
64MHz
Connectivity
EBI/EMI, I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
69
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 24x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TFQFP
Controller Family/series
PIC18
Eeprom Memory Size
1024Byte
Ram Memory Size
3862Byte
Cpu Speed
16MIPS
No. Of Timers
11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F86K22-I/PTRSL
Manufacturer:
Microchip Technology
Quantity:
10 000
TABLE 31-1:
 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
I
E
V
T
T
T
E
V
T
I
T
V
DDP
DDP
Sym
DEW
RETD
REF
IW
RETD
WE
PP
D
DRW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 9.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Single-Supply Programming is disabled.
The MPLAB ICD2 does not support variable V
placed between the ICD2 and target system when programming or debugging with the ICD2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read/Write
for Read
Characteristic
PP
/RE5 pin
(2)
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
DD
100K
10K
Min
1.8
1.8
1.8
1.8
1M
40
40
PP
+ 1.5
output. Circuitry to limit the ICD2 V
PIC18F87K22 FAMILY
1000K
Typ†
10M
2
4
Max
5.5
3.3
5.5
3.6
10
10
10
1
Units
Year Provided no other
Year Provided no other
E/W -40C to +85C
E/W -40°C to +85°C
E/W -40  C to +85  C
mA
mA
ms
ms
A
V
V
V
V
V
 +85°C for industrial
(Note 3, Note 4)
(Note 2)
Using EECON to read/write
specifications are violated
ENVREG tied to V
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
PP
voltage must be
Conditions
DS39960B-page 497
DD
SS
DD

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