MC812A4CPVE8 Freescale Semiconductor, MC812A4CPVE8 Datasheet - Page 76

• Manufacturer Part Number: MC812A4CPVE8
• Description: IC MCU 16BIT EEPROM 4K 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC12r

Specifications of MC812A4CPVE8

• Core Processor: CPU12
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: POR, WDT
• Number Of I /o: 83
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: EEPROM
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 112-LQFP
• Processor Series: HC812A
• Core: HC12
• Data Bus Width: 16 bit
• Data Ram Size: 1 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Controller Family/series: 68HC12
• No. Of I/o's: 91
• Eeprom Memory Size: 4KB
• Ram Memory Size: 1KB
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

EEPROM
EEVEN — Even Row Programming Bit
MARG — Program and Erase Voltage Margin Test Enable Bit
EECPD — Charge Pump Disable Bit
EECPRD — Charge Pump Ramp Disable Bit
ECPM — Charge Pump Monitor Enable Bit
7.3.4 EEPROM Programming Register
Read: Anytime
Write: Varies from bit to bit
BULKP — Bulk Erase Protection Bit
BYTE — Byte and Aligned Word Erase Bit
ROW — Row or Bulk Erase Bit (when BYTE = 0)
BYTE and ROW have no effect when ERASE = 0.
If BYTE = 1 and test mode is not enabled, only the location specified by the address written to the
programming latches is erased. The operation is a byte or an aligned word erase depending on the size
of written data.
76
This bit is used to evaluate the program/erase voltage margin.
This bit is known to enhance write/erase endurance of EEPROM cells.
Write anytime, if EEPGM = 0 and PROTLCK = 0
Write anytime, if EEPGM = 0
Write anytime, if EEPGM = 0
1 = Bulk program/erase all even rows
0 = Even row bulk programming/erasing disabled
1 = Program and erase margin test
0 = Normal operation
1 = Disable charge pump
0 = Charge pump is turned on during program/erase
1 = Disable charge pump controlled ramp up
0 = Charge pump is turned on progressively during program/erase
1 = Output the charge pump voltage on the IRQ/V
0 = Normal operation
1 = EEPROM protected from bulk or row erase
0 = EEPROM can be bulk erased.
1 = One byte or one aligned word erase only
0 = Bulk or row erase enabled
1 = Erase only one 32-byte row
0 = Erase entire EEPROM array
Address: $00F3
Reset:
Read:
Write:
BULKP
Figure 7-5. EEPROM Programming Register (EEPROG)
Bit 7
1
6
0
0
MC68HC812A4 Data Sheet, Rev. 7
5
0
0
BYTE
4
0
PP
ROW
pin
3
0
ERASE
2
0
EELAT
1
0
Freescale Semiconductor
EEPGM
Bit 0
0