PEB2256H-V12 Infineon Technologies, PEB2256H-V12 Datasheet - Page 446
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
PEB2256H-V12
Manufacturer Part Number
PEB2256H-V12
Description
IC INTERFACE LINE 3.3V 80-MQFP
Manufacturer
Infineon Technologies
Datasheet
1.PEB2256H-V12.pdf
(490 pages)
Specifications of PEB2256H-V12
Applications
*
Interface
*
Voltage - Supply
*
Package / Case
80-SQFP
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PEB2256H-V12
PEB2256H-V12IN
PEB2256H-V12IN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PEB2256H-V12
Manufacturer:
Infineon Technologies
Quantity:
10 000
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11
11.1
Parameter
Ambient temperature under bias
Storage temperature
IC supply voltage (digital)
IC supply voltage receive (analog)
IC supply voltage transmit (analog)
Voltage on any pin with respect to ground
ESD robustness
1)
Note: Stresses above those listed here may cause permanent damage to the
11.2
Parameter
Ambient temperature
Supply voltages
Analog input voltages
Digital input voltages
Ground
1)
Note: In the operating range, the functions given in the circuit description are fulfilled.
Data Sheet
According to JEDEC standard JESD22-A114.
Voltage ripple on analog supply less than 50 mV
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
V
V
DD
SS
, V
, V
Electrical Characteristics
Absolute Maximum Ratings
Operating Range
SSR
DDR
1)
and V
and V
HBM: 1.5 k , 100 pF
SSX
DDX
have to be connected to ground level.
have to be connected to the same voltage level,
Symbol
T
V
V
V
V
V
V
V
V
A
DD
DDR
DDX
IA
ID
SS
SSR
SSX
min.
-40
3.13
0
0
0
Limit Values
446
Symbol
T
T
V
V
V
V
V
A
stg
DD
DDR
DDX
S
ESD,HBM
max.
85
3.46
V
5.25
0
DDR
+0.3 V
– 40 to 85
– 65 to 125
– 0.4 to 6.5
– 0.4 to 6.5
– 0.4 to 6.5
– 0.4 to 6.5
2000
Electrical Characteristics
Unit Test Condition
V
V
V
Limit Values
C
3.3 V
1)
V
DD
= 5.0 V 5%
FALC56 V1.2
5%
PEB 2256
2002-08-27
Unit
V
V
V
V
V
C
C
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