MC9S12XEQ512CAL Freescale Semiconductor, MC9S12XEQ512CAL Datasheet - Page 1229
MC9S12XEQ512CAL
Manufacturer Part Number
MC9S12XEQ512CAL
Description
MCU 16BIT 512K FLASH 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.MC9S12XEP768CAL.pdf
(1328 pages)
Specifications of MC9S12XEQ512CAL
Core Processor
HCS12X
Core Size
16-Bit
Speed
50MHz
Connectivity
CAN, EBI/EMI, I²C, IrDA, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
91
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
No. Of I/o's
91
Eeprom Memory Size
4KB
Ram Memory Size
32KB
Cpu Speed
50MHz
No. Of Timers
3
No. Of Pwm Channels
8
Digital Ic Case Style
LQFP
Rohs Compliant
Yes
Processor Series
S12XE
Core
HCS12
Data Bus Width
16 bit
Data Ram Size
32 KB
Interface Type
CAN, SCI, SPI
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
91
Number Of Timers
25
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S12XEQ512CAL
Manufacturer:
FOCALTECH
Quantity:
1 100
Company:
Part Number:
MC9S12XEQ512CAL
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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A.3.1.15
The maximum time for partitioning the D-flash (ERPART=16, DFPART=0) is given by :
A.3.1.16
Erase Verify D-Flash for a given number of words N
A.3.1.17
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The
D-Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row
boundary) at a 50MHz bus frequency. The typical programming time can be calculated using the following
equation, whereby N
boundary is crossed.
The maximum programming time can be calculated using the following equation
A.3.1.18
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
Maximum D-Fash sector erase times can be calculated using the following equation.
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
Freescale Semiconductor
t
t part 21800
t check
t
t eradf 5025
t eradf 20100
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f NVMBUS
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(
(
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Full Partition D-Flash (FCMD=0x0F)
Erase Verify D-Flash Section (FCMD=0x10)
D-Flash Programming (FCMD=0x11)
Erase D-Flash Sector (FCMD=0x12)
840
15
15
1
+
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------------------------ -
f
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NVMOP
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N W
54 N
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f NVMOP
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56 N
denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a
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MC9S12XE-Family Reference Manual Rev. 1.23
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NVMOP
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t mass
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460
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640 N
840 N
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Appendix A Electrical Characteristics
W
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1229
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