D13008VXI25V Renesas Electronics America, D13008VXI25V Datasheet - Page 557

MCU 3V 0K I-TEMP PB-FREE 100-TQF

D13008VXI25V

Manufacturer Part Number
D13008VXI25V
Description
MCU 3V 0K I-TEMP PB-FREE 100-TQF
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of D13008VXI25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
35
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
8. Block transfer instructions
Notes: 1. The number of states is the number of states required for execution when the
Mnemonic
EEPMOV. B
EEPMOV. W
2. n is the value set in register R4L or R4.
(1) Set to 1 when a carry or borrow occurs at bit 11; otherwise cleared to 0.
(2) Set to 1 when a carry or borrow occurs at bit 27; otherwise cleared to 0.
(3) Retains its previous value when the result is zero; otherwise cleared to 0.
(4) Set to 1 when the adjustment produces a carry; otherwise retains its previous value.
(5) The number of states required for execution of an instruction that transfers data in
(6) Set to 1 when the divisor is negative; otherwise cleared to 0.
(7) Set to 1 when the divisor is zero; otherwise cleared to 0.
(8) Set to 1 when the quotient is negative; otherwise cleared to 0.
instruction and its operands are located in on-chip memory. For other cases see section
A.3, Number of States Required for Execution.
synchronization with the E clock is variable.
Instruction Length (bytes)
Addressing Mode and
4
4
Operation
if R4L ≠ 0
else next;
if R4 ≠ 0
else next;
repeat @R5 → @R6
until
repeat @R5 → @R6
until
R5+1 → R5
R6+1 → R6
R4L−1 → R4L
R4L=0
R5+1 → R5
R6+1 → R6
R4−1 → R4
R4L=0
Rev.4.00 Aug. 20, 2007 Page 511 of 638
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I
Condition Code
Appendix A Instruction Set
H N Z
REJ09B0395-0400
V C
States*
8+4n*
8+4n*
No. of
2
2
1

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