MC9S08JM32CLD Freescale Semiconductor, MC9S08JM32CLD Datasheet - Page 351

• Manufacturer Part Number: MC9S08JM32CLD
• Description: IC MCU 8BIT 32K FLASH 44-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08JM32CLD

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, LIN, SCI, SPI, USB
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-LQFP
• Processor Series: S08JM
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOJM, DEMOJMSKT, DEMOFLEXISJMSD, DEMO9S08JM16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 12-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

The average chip-junction temperature (T
where:
T
θ
P
P
P
For most applications, P
(if P
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
P
solving equations 1 and 2 iteratively for any value of T
A.5
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Freescale Semiconductor
JA
A
D
int
I/O
D
= Ambient temperature, °C
= P
(at equilibrium) for a known T
= Package thermal resistance, junction-to-ambient, °C/W
= I
I/O
= Power dissipation on input and output pins — user determined
int
DD
is neglected) is:
+ P
ESD Protection and Latch-Up Immunity
× V
I/O
DD
, Watts — chip internal power
I/O
<< P
K = P
int
A
and can be neglected. An approximate relationship between P
MC9S08JM60 Series Data Sheet, Rev. 3
. Using this value of K, the values of P
D
P
T
× (T
D
J
= K ÷ (T
= T
J
A
) in °C can be obtained from:
+ 273°C) + θ
A
+ (P
J
D
+ 273°C)
× θ
A
JA
JA
.
)
× (P
D
)
2
D
Appendix A Electrical Characteristics
and T
J
can be obtained by
D
Eqn. A-1
Eqn. A-2
Eqn. A-3
and T
351
J