MC9S08JM32CLD Freescale Semiconductor, MC9S08JM32CLD Datasheet - Page 369

• Manufacturer Part Number: MC9S08JM32CLD
• Description: IC MCU 8BIT 32K FLASH 44-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08JM32CLD

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, LIN, SCI, SPI, USB
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 33
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-LQFP
• Processor Series: S08JM
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOJM, DEMOJMSKT, DEMOFLEXISJMSD, DEMO9S08JM16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 12-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations.
Freescale Semiconductor
1
Num
Typical values are based on characterization data at V
10
1
2
3
4
5
6
7
8
9
(CPOL = 0)
(CPOL = 1)
(OUTPUT)
(INPUT)
C
C
(INPUT)
(INPUT)
(INPUT)
NOTE:
MISO
MOSI
SCK
SCK
1. Not defined but normally LSB of character just received
SS
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
NOTE
= –40°C to + 85°C
SEE
Characteristic
8
5
3
(2)
Figure A-13. SPI Slave Timing (CPHA = 1)
2
SLAVE
4
5
6
MC9S08JM60 Series Data Sheet, Rev. 3
10
Table A-16. Flash Characteristics
MSB IN
2
1
4
MSB OUT
7
5
(2)
4
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
11
BIT 6 . . . 1
Symbol
prog/erase
BIT 6 . . . 1
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
SLAVE LSB OUT
3
20,000
Appendix A Electrical Characteristics
4000
100,000
Typ
9
4
100
LSB IN
—
1
Max
6.67
200
5.5
5.5
—
—
—
9
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
369