MC9S08JM32CLD Freescale Semiconductor, MC9S08JM32CLD Datasheet - Page 56

IC MCU 8BIT 32K FLASH 44-LQFP

MC9S08JM32CLD

Manufacturer Part Number
MC9S08JM32CLD
Description
IC MCU 8BIT 32K FLASH 44-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet

Specifications of MC9S08JM32CLD

Core Processor
HCS08
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SCI, SPI, USB
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Processor Series
S08JM
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI/SPI
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
33
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMOJM, DEMOJMSKT, DEMOFLEXISJMSD, DEMO9S08JM16
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 12-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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0
Chapter 4 Memory
4.5.6
The block protection feature prevents the protected region of flash from program or erase changes. Block
protection is controlled through the flash protection register (FPROT). When enabled, block protection
begins at any 512 byte boundary below the last address of flash, 0xFFFF. (see
Protection Register (FPROT and
After exit from reset, FPROT is loaded with the contents of the NVPROT location which is in the
nonvolatile register block of the flash memory. FPROT cannot be changed directly from application
software so a runaway program cannot alter the block protection settings. Since NVPROT is within the
last 512 bytes of flash, if any amount of memory is protected, NVPROT is itself protected and cannot be
altered (intentionally or unintentionally) by the application software. FPROT can be written through
background debug commands which allows a way to erase and reprogram a protected flash memory.
The block protection mechanism is illustrated below. The FPS bits are used as the upper bits of the last
address of unprotected memory. This address is formed by concatenating FPS7:FPS1 with logic 1 bits as
shown. For example, in order to protect the last 8192 bytes of memory (addresses 0xE000 through
0xFFFF), the FPS bits must be set to 1101 111 which results in the value 0xDFFF as the last address of
unprotected memory. In addition to programming the FPS bits to the appropriate value, FPDIS (bit 0 of
NVPROT) must be programmed to logic 0 to enable block protection. Therefore the value 0xDE must be
programmed into NVPROT to protect addresses 0xE000 through 0xFFFF.
One use for block protection is to block protect an area of flash memory for a bootloader program. This
bootloader program then can be used to erase the rest of the flash memory and reprogram it. Because the
56
Writing a second time to FCMD before launching the previous command (There is only one write
to FCMD for every command.)
Writing to any flash control register other than FCMD after writing to a flash address
Writing any command code other than the five allowed codes (0x05, 0x20, 0x25, 0x40, or 0x41)
to FCMD
Writing any flash control register other than the write to FSTAT (to clear FCBEF and launch the
command) after writing the command to FCMD.
The MCU enters stop mode while a program or erase command is in progress (The command is
aborted.)
Writing the byte program, burst program, or page erase command code (0x20, 0x25, or 0x40) with
a background debug command while the MCU is secured (The background debug controller can
only do blank check and mass erase commands when the MCU is secure.)
Writing 0 to FCBEF to cancel a partial command
Flash Block Protection
FPS7 FPS6 FPS5 FPS4 FPS3 FPS2 FPS1
A15
A14
A13
Figure 4-4. Block Protection Mechanism
NVPROT).”)
A12
MC9S08JM60 Series Data Sheet, Rev. 3
A11
A10
A9
A8
1
A7 A6 A5 A4 A3 A2 A1 A0
1
1
1
1
Section 4.7.4, “Flash
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Freescale Semiconductor
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