MC8640DTHX1067NE Freescale Semiconductor, MC8640DTHX1067NE Datasheet - Page 113

• Manufacturer Part Number: MC8640DTHX1067NE
• Description: IC MPU DUAL CORE E600 1023FCCBGA
• Manufacturer: Freescale Semiconductor

Specifications of MC8640DTHX1067NE

• Processor Type: MPC86xx PowerPC 32-Bit
• Speed: 1.067GHz
• Voltage: 0.95V
• Mounting Type: Surface Mount
• Package / Case: 1023-FCCBGA
• Processor Series: MPC8xxx
• Core: e600
• Development Tools By Supplier: MCEVALHPCN-8641D
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Features: -
• Lead Free Status / Rohs Status: No

During operation, the die-junction temperatures (T
Table
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (T
may range from 30 to 40 °C. The air temperature rise within a cabinet (T
5 to 10 °C. The thermal resistance of the thermal interface material (R
example, assuming a T
of 43.4 W, the following expression for T
Die-junction temperature: T
For this example, a R
below the maximum value of
Though the die junction-to-ambient and the heat sink-to-ambient thermal resistances are a common
figure-of-merit used for comparing the thermal performance of various microelectronic packaging
technologies, one should exercise caution when only using this metric in determining thermal management
because no single parameter can adequately describe three-dimensional heat flow. The final die-junction
operating temperature is not only a function of the component-level thermal resistance, but the
system-level design and its operating conditions. In addition to the component's power consumption, a
number of factors affect the final operating die-junction temperature—airflow, board population (local
heat flux of adjacent components), heat sink efficiency, heat sink placement, next-level interconnect
technology, system air temperature rise, altitude, and so on.
Due to the complexity and variety of system-level boundary conditions for today's microelectronic
equipment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction)
may vary widely. For these reasons, we recommend using conjugate heat transfer models for the board as
well as system-level designs.
For system thermal modeling, the MPC8640 thermal model is shown in
to represent this device. The die is modeled as 12.4 × 15.3 mm at a thickness of 0.86 mm. See
“Power Characteristics,”
33×33×1.2 mm with orthotropic conductivity: 13.5 W/(m
z-direction. The die is centered on the substrate. The bump/underfill layer is modeled as a collapsed
thermal resistance between the die and substrate with a conductivity of 5.3 W/(m
dimension of 0.07 mm. Because the bump/underfill is modeled with zero physical dimension (collapsed
height), the die thickness was slightly enlarged to provide the correct height. The C5 solder layer is
modeled as a cuboid with dimensions 33x33x0.4 mm and orthotropic thermal conductivity of 0.034 W/(m
• K) in the xy-plane and 9.6 W/(m • K) in the z-direction. An LGA solder layer would be modeled as a
collapsed thermal resistance with thermal conductivity of 9.6W/(m • K) and an effective height of 0.1 mm.
Freescale Semiconductor
2. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 3
θsa
i
of 30 °C, a T
value of 1.32 °C/W or less is required to maintain the die junction temperature
for power dissipation details. The substrate is modeled as a single block
j
Table
= 30 °C + 5 °C + (0.1 °C/W + 0.2 °C/W + θ
r
2.
of 5 °C, a package R
j
is obtained:
j
) should be maintained less than the value specified in
θJC
•
K) in the xy-plane and 5.3 W/(m
= 0.1, and a typical power consumption (P
θint
Figure
) is typically about 0.2 °C/W. For
r
) may be in the range of
sa
) × 43.4 W
62. Four cuboids are used
•
K) in the thickness
•
K) in the
Section 3,
Thermal
113
d
i
)
)