MC8640DTHX1067NE Freescale Semiconductor, MC8640DTHX1067NE Datasheet - Page 19

• Manufacturer Part Number: MC8640DTHX1067NE
• Description: IC MPU DUAL CORE E600 1023FCCBGA
• Manufacturer: Freescale Semiconductor

Specifications of MC8640DTHX1067NE

• Processor Type: MPC86xx PowerPC 32-Bit
• Speed: 1.067GHz
• Voltage: 0.95V
• Mounting Type: Surface Mount
• Package / Case: 1023-FCCBGA
• Processor Series: MPC8xxx
• Core: e600
• Development Tools By Supplier: MCEVALHPCN-8641D
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Features: -
• Lead Free Status / Rohs Status: No

6
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8640. Note that DDR SDRAM is Dn_GV
Dn_GV
6.1
Table 13
MPC8640 when Dn_GV
Table 14
Freescale Semiconductor
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. D n _GV
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. D n _GV
2. D n _MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
V
Peak-to-peak noise on D n _MV
equal to D n _MV
OUT(peak-to-peak)
TT
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
DDR and DDR2 SDRAM
DD
DD
REF
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
provides the DDR2 capacitance when Dn_GV
DDR SDRAM DC Electrical Characteristics
(typ) = 1.8 V.
is expected to be within 50 mV of the DRAM D n _GV
Parameter
is expected to be equal to 0.5 × D n _GV
Table 13. DDR2 SDRAM DC Electrical Characteristics for D n _GV
MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 3
REF
= 0.2 V.
OUT
Parameter
OUT
. This rail should track variations in the DC level of D n _MV
= 0.280 V)
Table 14. DDR2 SDRAM Capacitance for D n _GV
= 1.420 V)
DD
(typ) = 1.8 V
REF
DD
may not exceed ±2% of the DC value.
= 1.8 V ± 0.090 V, f = 1 MHz, T
D n _MV
D n _GV
Symbol
V
V
V
I
I
I
OH
OZ
OL
TT
IH
.
IL
REF
DD
DD
DD
, and to track D n _GV
D n _MV
D n _MV
(typ) = 2.5 V and DDR2 SDRAM is
0.49 × D n _GV
Symbol
≤
C
C
V
DIO
IO
OUT
–13.4
DD
1.71
–0.3
13.4
REF
Min
–50
DD(typ)
REF
at all times.
≤
+ 0.125
– 0.04
D n _GV
A
= 25°C, V
DD
= 1.8 V.
DD
Min
DD
—
6
DC variations as measured at the receiver.
REF
.
D n _MV
D n _MV
0.51 × D n _GV
DD
OUT
D n _GV
.
(typ)=1.8 V
= D n _GV
REF
Max
1.89
REF
50
—
—
DD
DD
Max
0.5
– 0.125
+ 0.04
8
+ 0.3
(typ) = 1.8 V
DD
DD
÷ 2,
DDR and DDR2 SDRAM
Unit
Unit
pF
pF
mA
mA
μA
V
V
V
V
V
Notes
Notes
—
—
—
—
1
2
3
4
1
1
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