MPC8572DS Freescale Semiconductor, MPC8572DS Datasheet - Page 122

• Manufacturer Part Number: MPC8572DS
• Description: KIT MPU POWERQUICC III
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC III™r
• Type: MPUr

Specifications of MPC8572DS

• Contents: Board
• Data Rate: 10 Mbps to 100 Mbps
• Memory Type: Flash, DDR, DDR2, DDR3, SDRAM
• Interface Type: I2C, Ethernet
• Operating Voltage: 3.3 V
• Data Bus Width: 32 bit
• Product: Development Tools
• Silicon Manufacturer: Freescale
• Core Architecture: Power Architecture
• Core Sub-architecture: PowerQUICC
• Silicon Core Number: MPC85xx
• Silicon Family Name: PowerQUICC III
• Rohs Compliant: Yes
• For Use With/related Products: MPC8572E
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal
20.1
The MPC8572E has a temperature diode on the microprocessor that can be used in conjunction with other
system temperature monitoring devices (such as Analog Devices, ADT7461™). These devices use the
negative temperature coefficient of a diode operated at a constant current to determine the temperature of
the microprocessor and its environment. It is recommended that each MPC8572E device be calibrated.
The following are the specifications of the on-board temperature diode:
An approximate value of the ideality may be obtained by calibrating the device near the expected
operating temperature.
Ideality factor is defined as the deviation from the ideal diode equation:
Another useful equation is:
Where:
122
Junction to case
Notes:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
2. Per JEDEC JESD51-2 with the single-layer board (JESD51-3) horizontal.
3. Per JEDEC JESD51-6 with the board (JESD51-7) horizontal.
4. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured
5. Thermal resistance between the active surface of the die and the case top surface determined by the cold plate method
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance
on the top surface of the board near the package.
(MIL SPEC-883, Method 1012.1).
V
V
V
Operating range 2–300 μA
Diode leakage < 10 nA @ 125°C
I
I
V
H
fw
s
f
f
d
I
fw
– V
= Saturation current
> 0.40 V
< 0.90 V
= Voltage at diode
= Forward current
Temperature Diode
= I
L
= n
s
MPC8572E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 5
e
KT
__
q
Rating
___
nKT
qV
ln
f
Table 84. Package Thermal Characteristics (continued)
__
– 1
I
I
L
H
Board
—
Symbol
R
ΘJC
Value
0.5
Freescale Semiconductor
°
Unit
C/W
Notes
5