HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 520

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 17 Flash Memory [H8/3026F-ZTAT Version]
Bit 7—Flash Write Enable (FWE): Sets hardware protection against flash memory
programming/erasing.
Bit 7
FWE
0
1
Bit 6—Software Write Enable (SWE): Enables or disables flash memory programming and
erasing. (This bit should be set when setting bits 5 to 0, EBR1 bits 7 to 0, and EBR2 bits 3 to 0.)
Bit 6
SWE
0
1
Note: Do not execute a SLEEP instruction while the SWE bit is set to 1.
Bit 5—Erase Setup (ESU): Prepares for a transition to erase mode. Set this bit to 1 before setting
the E bit to 1 in FLMCR1 (do not set the SWE, PSU, EV, PV, E, or P bit at the same time).
Bit 5
ESU
0
1
Rev. 2.00 Sep 20, 2005 page 480 of 800
REJ09B0260-0200
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
Description
Programming/erasing disabled
Programming/erasing enabled
[Setting condition]
When FWE = 1
Description
Erase setup cleared
Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
(Initial value)
(Initial value)