HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 603

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 Flash Memory [H8/3024F-ZTAT Version]
18.6.4
Erase-Verify Mode
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E bit in FLMCR1, then wait for at least (t
) µs
ce
before clearing the ESU bit to exit erase mode. After exiting erase mode, the watchdog timer
setting is also cleared. The operating mode is then switched to erase-verify mode by setting the
EV bit in FLMCR1. Before reading in erase-verify mode, a dummy write of H'FF data should be
made to the addresses to be read. The dummy write should be executed after the elapse of (t
) µs
sev
or more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (t
) µs after the dummy write before performing this
sevr
read operation. If the read data has been erased (all 1), a dummy write is performed to the next
address, and erase-verify is performed. If the read data is unerased, set erase mode again, and
repeat the erase/erase-verify sequence as before. The maximum number of repetitions of the
erase/erase-verify sequence is indicated by the maximum erase count (N). When verification is
completed, exit erase-verify mode, and wait for at least (t
) µs. If erasure has been completed on
cev
all the erase blocks, clear the SWE bit in FLMCR1, and leave a wait time of at least (t
) µs.
cswe
If erasing multiple blocks, set a single bit in EBR for the next block to be erased, and repeat the
erase/erase-verify sequence as before.
Rev. 2.00 Sep 20, 2005 page 563 of 800
REJ09B0260-0200