HD64F3026X25 Renesas Electronics America, HD64F3026X25 Datasheet - Page 615

• Manufacturer Part Number: HD64F3026X25
• Description: MCU 3V 256K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3026X25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

7. Do not use interrupts while flash memory is being programmed or erased.
8. Do not perform additional programming. Erase the memory before reprogramming.
9. Before programming, check that the chip is correctly mounted in the PROM writer.
10. Do not touch the socket adapter or chip during programming.
11. A wait time of 100 µs or more is necessary when performing a read after a transition to
12. Use byte access on the registers that control the flash memory (FLMCR1, FLMCR2,
All interrupt requests, including NMI, should be disabled during FWE application to give
priority to program/erase operations (including emulation in RAM).
Bus release must also be disabled.
In on-board programming, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
Overcurrent damage to the device can result if the index marks on the PROM writer socket,
socket adapter, and chip are not correctly aligned.
Touching either of these can cause contact faults and write errors.
normal mode from program, erase, or verify mode.
EBR, and RAMCR).
Section 18 Flash Memory [H8/3024F-ZTAT Version]
Rev. 2.00 Sep 20, 2005 page 575 of 800
REJ09B0260-0200