MC9S12XEP100MAL Freescale Semiconductor, MC9S12XEP100MAL Datasheet - Page 1223

• Manufacturer Part Number: MC9S12XEP100MAL
• Description: IC MCU 16BIT 1M FLASH 112-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS12r

Specifications of MC9S12XEP100MAL

• Core Processor: HCS12X
• Core Size: 16-Bit
• Speed: 50MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 91
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.72 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 112-LQFP
• Processor Series: S12XE
• Core: HCS12
• Data Bus Width: 16 bit
• Data Ram Size: 64 KB
• Interface Type: SPI, SSI
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 91
• Number Of Timers: 25
• Operating Supply Voltage: - 0.3 V to + 6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWHCS12
• Development Tools By Supplier: KIT33812ECUEVME, EVB9S12XEP100, DEMO9S12XEP100
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• For Use With: EVB9S12XEP100 - BOARD EVAL FOR MC9S12XEP100DEMO9S12XEP100 - BOARD DEMO FOR MC9S12XEP100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
A.2.3
Table A-17
injection, input capacitance and source resistance.
A.2.3.1
For the following definitions see also
Differential non-linearity (DNL) is defined as the difference between two adjacent switching steps.
The integral non-linearity (INL) is defined as the sum of all DNLs:
Freescale Semiconductor
Conditions are shown in
Num C
Refer to A.2.2.2 for further information concerning source resistance
1
2
3
4
5
6
C Max input source resistance
D Total input capacitance Non sampling
D Input internal Resistance
C Disruptive analog input current
C Coupling ratio positive current injection
C Coupling ratio negative current injection
The additional input voltage error on the converted channel can be calculated as:
with I
Total input capacitance Sampling
and
ATD Accuracy
INJ
ATD Accuracy Definitions
V
Table A-18
being the sum of the currents injected into the two pins adjacent to the converted channel.
ERR
Table A-4
= K * R
specify the ATD conversion performance excluding any errors due to current
S
unless otherwise noted
Rating
* I
MC9S12XE-Family Reference Manual Rev. 1.23
Table A-16. ATD Electrical Characteristics
1
INJ
INL n ( )
Figure
DNL i ( )
=
i
A-1.
∑
=
n
1
=
DNL i ( )
V
------------------------- - 1
i
1LSB
–
V
i 1
=
–
Symbol
V
-------------------- - n
1LSB
C
C
R
n
I
–
R
K
K
NA
INN
INS
INA
–
S
p
n
V
0
–
–2.5
Min
—
—
—
—
—
—
Appendix A Electrical Characteristics
Typ
—
—
—
—
—
—
5
1E-4
2E-3
Max
2.5
10
16
15
1
Unit
A/A
A/A
mA
KΩ
kΩ
pF
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