MC68HC908GP16CFB Freescale Semiconductor, MC68HC908GP16CFB Datasheet - Page 251
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MC68HC908GP16CFB
Manufacturer Part Number
MC68HC908GP16CFB
Description
MCU 8-BIT 16K FLASH 44-QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908EY16VFAR2.pdf
(278 pages)
Specifications of MC68HC908GP16CFB
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
33
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC68HC908GP16CFB
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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20.12 Memory Characteristics
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
6. In the 125°C to 135°C temperature range, the FLASH is guaranteed as read only.
<1 K cycles
>1 K cycles
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
HV
RCV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
x 64) ≤ t
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
—
—
—
maximum.
(3)
(2)
(1)
10 k
Min
100
1.3
0.9
3.6
10
30
15
—
1
0
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Memory Characteristics
Max
8 M
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
4
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
251
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